vishay TSAL4400 document number 81006 rev. 4, 24-jun-03 vishay semiconductors www.vishay.com 1 94 8488 gaas/gaalas ir emitting diode in ? 3 mm (t-1) package description TSAL4400 is a high efficiency infrared emitting diode in gaalas on gaas technology, molded in clear, blue- grey tinted plastic packages. in comparison with the standard gaas on gaas tech- nology these emitters achieve about 100 % radiant power improvement at a similar wavelength. the forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. therefore these emitters are ideally suitable as high performance replacements of standard emitters. features ? extra high radiant power low forward voltage suitable for high pulse current operation standard t-1 ( ? 3 mm) package angle of half intensity ? = 25 peak wavelength p = 940 nm high reliability good spectral matching to si photodetectors applications infrared remote control units free air transmission systems infrared source for optical counters and card readers absolute maximum ratings t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit reverse voltage v r 5 v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power dissipation p v 210 mw junction temperature t j 100 c operating temperature range t amb - 55 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 sec, 2 mm from case t sd 260 c thermal resistance junction/ambient r thja 350 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.35 1.6 v i f = 1 a, t p = 100 s v f 2.6 3 v temp. coefficient of v f i f = 100 ma tk vf - 1.3 mv/k
www.vishay.com 2 document number 81006 rev. 4, 24-jun-03 vishay TSAL4400 vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 25 pf radiant intensity i f = 100 ma, t p = 20 ms i e 16 30 mw/sr i f = 1.0 a, t p = 100 s i e 135 240 mw/sr radiant power i f = 100 ma, t p = 20 ms e 35 mw temp. coefficient of e i f = 20 ma tk e - 0.6 %/k angle of half intensity ? 25 deg peak wavelength i f = 100 ma p 940 nm spectral bandwidth i f = 100 ma ? 50 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns fall time i f = 100 ma t f 800 ns virtual source diameter method: 63% encircled energy ? 2.8 mm parameter test condition symbol min ty p. max unit figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature 0 50 100 150 200 250 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 94 7957 e r thja 20 40 60 80 100 0 020406080 0 50 100 150 200 250 i ? forward current ( ma) f t amb ? ambient temperature ( c ) 100 96 11986 r thja figure 3. pulse forward current vs. pulse duration figure 4. forward current vs. forward voltage t p ? pulse duration ( ms ) 96 11987 10 0 10 1 10 1 10 ?1 10 ?1 10 0 10 2 10 ?2 i ? forward current (a) f t p /t=0.01 i fsm =1a( single pulse ) 0.05 0.1 0.5 1.0 v f - forward voltag e(v) 13600 10 1 10 0 10 2 10 3 10 4 t p = 100 s t p / t = 0.001 4 3 2 1 0 i - forward current ( ma ) f
vishay TSAL4400 document number 81006 rev. 4, 24-jun-03 vishay semiconductors www.vishay.com 3 figure 5. relative forward voltage vs. ambient temperature figure 6. radiant intensity vs. forward current figure 7. radiant power vs. forward current 0.7 0.8 0.9 1.0 1.1 1.2 v - relative forward voltage frel 94 7990 e i f =10ma t amb - ambient temperature ( c) 100 80 60 40 20 0 14309 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i f ? forward current ( ma ) i ? radiant intensity ( mw/sr ) e - radiant power ( mw ) e i f - forward current ( ma ) 13602 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i, e rel e rel 140 94 7993 e i f =20ma t amb - ambient temperature ( c) 890 940 0 0.25 0.5 0.75 1.0 1.25 wavelength ( nm ) 990 14291 relative radiant power e rel i f = 100 ma 0.4 0.2 0 0.2 0.4 0.6 14328 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i ? relative radiant intensity e rel
www.vishay.com 4 document number 81006 rev. 4, 24-jun-03 vishay TSAL4400 vishay semiconductors package dimensions in mm 95 10913
vishay TSAL4400 document number 81006 rev. 4, 24-jun-03 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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